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The main goal of the Magnetron and Ion Beam Epitaxy System is to combine deposition processes with the analytical capabilities of SPEAR and an UHV TEM. Samples can be grown in MIBE and then transferred to SPEAR where analytical techniques can be performed. It has two metal ion sources currently fitted with boron and carbon targets, two d.c. magnetron sputtering sources used to form ZrN and CNx multilayer materials, and one gas ion source.