This instrument uses a high precision Bede D3 goniometer combined with a powerful rotating anode generator and several beam-condition analyzer crystals for high precision GIXD analyses of thin films and semiconductors. Typically used to measure the perfection or imperfection of the crystal lattice in thin films (i.e. rocking curves), the misalignment between film and substrate in epitaxial films, and reciprocal space mapping. This diffractometer could also be used, theoretically, for high precision XRR.