The ICP III-V Plasma Etcher system is equipped with a load-lock to transport wafers into the etch chamber while keeping the chamber under vacuum. The system has a 2MHz, 1000W inductively coupled coil used to generate and control the plasma density. The substrate is independently biased using a 13.56MHz, 600W power supply. The system computer controls the transfer of wafers between the load lock and the process chamber, the vacuum pumping cycles, and the process parameters. The system is configured for a single 4-inch diameter wafer and uses a mechanical clamp to hold the sample on the RF chuck. Helium backside cooling is used to help keep the sample at a stable set temperature.