The plasma process is accomplished through the use of a low pressure RF induced gaseous discharge. The specimen is loaded into the reaction chamber and the chamber is evacuated to a vacuum pressure of 0.1 - 0.2Torr. A carrier gas is then introduced into the chamber, raising the chamber pressure to 0.3 - 1.2Torr, depending on the application. RF power is applied around the chamber. This excites the carrier gas molecules and dissociates it into chemically active atoms and molecules. The mechanism employed in this process is one of ionization. The combustion products, which are completely dissociated and harmless, are carried away in the gas stream. The unique property of this process is that it occurs at relatively low temperatures without employing toxic chemicals.