The Trion Phantom II reactive ion etcher (RIE) is designed for either isotropic or anisotropic dry etching of silicon dioxide, silicon nitride and other materials using fluorine and oxygen based chemistries (CF4, CHF3, SF6, O2). It has a compact modular design on a space-saving rollaway platform. It has an open chamber design allowing for easy loading and processing of multiple sized substrates or pieces up to 8 inches in diameter. A 600 watt 13.56MHz inductively coupled plasma (ICP) generator and 170 liter/sec turbo pump allow for a large process window for many applications. A touchscreen interface with Windows/PC software for the process controller allows easy monitoring of process parameters at all times.