- Schottky field emission gun for high resolution and excellent beam stability
- Large specimen chamber capable of imaging up to a 6" wafer -Spatial resolution of 1.5nm at 20kV and 3.5nm at 1kV
- High probe current with stability better than 0.5% per hour. Variable from 4pA to 10nA
- In-lens and lower SE detectors. Robinson backscattered electron detector for compositional contrast
- ElectronScribe beam writing interface for electron beam lithography
- Keithley 480 picoammeter and faraday cup for beam current monitoring