This tool is capable of creating deep vertical trenches. Gases available in this tool are Chlorine, Sulfur Hexafluoride and Octafluorocyclobutrane.
Nanofabrication Facility (NNF) provides users with a broad range of nanofabrication and houses all standard thin film processing tools.
This tool is capable of creating deep vertical trenches. Gases available in this tool are Chlorine, Sulfur Hexafluoride and Octafluorocyclobutrane.
The 950B, usually referred to as the “scanner” is configured for 6 inch wafers. It has a numerical aperture of 0.63. Its light source is a Cymer ArF 10W Excimer Laser that generates light at 193 nm wavelength. It utilizes fused silica reticles that are 6 inches square and 0.250 inches thick. It can print a 26 mm by 32 mm field in one flash. Specified resolution is 130 nm, but smaller dimensions can be achieved in research mode. It has an Aerial II illumination system that is usually operated in annular mode, but it is capable of conventional illumination.
This system is used to deposit a variety of metal films.
The GCA 8500DSW stepper has a 16mm lens with 5x reduction and a numerical Aperture (NA) of 0.35, and uses a mercury arc lamp with a wavelength of 365nm. It is capable of exposing 3", 4" and 6" wafers. It has an automatic wafer handler that can be used for 6" notched wafers. The quartz reticles used in the stepper are 5"x 5" and 0.09" thick.
The MJB3 aligner used with samples up to 3” in diameter. Maximum mask size is 4” square. It operates in the wavelength range of 280-350 nm. The MA6 aligner can do both front and backside alignment for wafer pieces up through 6" wafers.
The system, which can accept wafers up to 6" in diameter is used for evaporating a variety of films including Au, Pt, Ag, Cr and Ti.
The Laurell Spinner is a multi-step programmable spinner that can accommodate pieces as well as 4 and 6 inch wafers. It is paired with two programmable hotplates in the same hood.
LPCVD system capable of depositing amorphous silicon, silicon dioxide, and silicon nitride.
The Nano eNabler™ system is a highly flexible molecular printer that can dispense minute volumes of liquid at defined positions to create patterns of spots or lines with high spatial accuracy.
The Nanometrics Nanospec/AFT is a reflectometer used to measure thin transparent films, such as oxides, nitrides, and photoresist on silicon wafers. It operates in the visual spectrum (~400 to 800 nm). It requires that the index of refraction of the given film be known.
This system is used to stamp a pattern into a polymer coating on a substrate. A stamp made of nickel or silicon is placed in the chamber. The substrate is placed on the substrate holder. The substrate is heated and the stamp is pressed into the polymer. The substrate is then cooled and the stamp released. Maximum heating capability is 250ºC. Most processes are done in the range of 5ºC to 200ºC. The stamp pressure is capable of a 70 bar maximum with most work done in the 12 to 15 bar range. Allowable substrate sizes are 2.5 inches in diameter or smaller.
This tool is primarily used to etch Si and SiGe. Gases available include Argon, Chlorine, Oxygen and Sulfur Hexafluoride (SF6).
The PM-600 is a RF plasma barrel reactor designed for stripping, etching and cleaning. The gas used is Oxygen.
This is a multi-wafer system, which can handle wafer sizes up to 8" in diameter. The tool is used to primarily deposit aluminum and titanium, however, other metals may also be considered provided cross-contamination is not a concern.
The tool is equipped with guns for RF magnetron sputtering. The guns can accept 2" or 3" targets. This tool is used to deposit a variety of materials including Aluminum, Titanium, Molybdenum, Chromium, Titanium Nitride and Silver. The system can accommodate substrate sizes up to 6 inches but it can also handle small pieces.
This tool is primarily used to etch silicon dioxide and silicon nitride. Gases available include Argon, Oxygen, Sulfur Hexafluoride (SF6) and Trifluoromethane (CHF3).
This tool is used to deposit thin silicon nitride layers.
The Develop Track is an SVG 90-SE develop track for 6 inch wafers. It has two develop modules and two hotplates and chill plates. It is plumbed with MF-319 developer, but has the capability of dispensing two different develop chemistries.
The Minilock II Reactive Ion Etching system is a RF plasma etch tool. This tool is used to etch silicon nitride, silicon dioxide, Si, aluminum and GaAs. Gases available include Oxygen, Chlorine, Boron Trichloride (BCl3), Tetrafluoromethane (CF4) and Hydrogen.
The system is a single-wafer epitaxy reactor with the capability of processing Si wafers as large as 8′′ wafers (It is also downward compatible with 4 and 6′′ wafers)
The Veeco Profilometer can measure the thickness of deposited or etched films via the vertical step-height measurement techique. The tool is also capable of measuring the wafer stress by measuring the wafer bow.
The Woollam VASE (Variable Angle Spectroscopic Ellipsometer) is used to measure the thickness of various thin films. The range of the Xenon light source is 200-1100nm. Samples up to 8 inches in diameter can be measured.