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FIB-FEI Quanta 200 3D FIB; 3.5nm SEM Resolution, 10nm Ga+ Beam, Pt GIS, and Selective Carbon Etch GIS

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FEI Quanta 200 3D FIB

A finely focused (10 nm) Ga+ beam impinges on a sample surface with 30 kV kinetic energy. Ions in the sample are sputter removed leaving a crater. By controlling the location, beam size and current density of the ion beam, material can be selectively removed from sub-micron areas. The MCL FIB also contains in situ scanning electron microscopy (SEM) capabilities for real time imaging of the ion milling site and even 3D tomography. Options also include localized deposition of Pt via a gas injection system (GIS), selective removal of carbon-based materials and an in situ cryogenic stage.

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