Back side alignment system for EV 801 bonder. Resolution to 2 microns.

Nitrogen/vacuum polyimide film anneal. Temp to 300 C.

Dries samples without surface tension distortions, by replacing liquid on sample with liquid CO2, then passing through CO2's supercritical region to change it from liquid to gas without crossing a phase boundary.

Phosphoric acid process tank at 170 C for stripping silicon nitride; quick-dump rinser (QDR); wafer and piece holder.

Flow hood and chemical bench for preparing substrates before thermal processing, for example in the LPCVD or oxidation furnaces. Four process tanks: Piranha bath; ammonia / hydrogen peroxide; hydrofluoric acid / hydrogen peroxide; and hydrofluoric acid.

Flow hood for handling solvents, including acetone and alcohol. No corrosives are permitted at this bench. Two hotplates, DI sink, DI sprayer, and N2 blowoff gun. Users may request permission to heat solvents at this bench.

Manual mask aligner and exposure tool.)

The 3? Canon aligner automatically feeds 3-inch wafers into the wafer chuck. A pre-alignment is performed by the system. It uses a standard 4? mask.

Programmable high-speed blade cuts substrates into dies. Blades available for silicon, glass, quartz, and gallium arsenide.

Deposition of metal by e-beam evaporation, onto substrates in vacuum. Real-time film thickness monitoring.

Deposition of dielectric materials by e-beam evaporation, onto substrates in vacuum. Real-time film thickness monitoring.

The Fiji tool creates thin films via atomic layer deposition, which is a type of chemical vapor deposition.

• ALD system with 6 precursor lines.
• 200mm chuck capable of heating to 300 deg. C
• Plasma generator for N2, O2 and H2
• Ozone generator.
• ALD Booster System
• LVPD system
• Materials available: Aluminum (Trimethylaluminum), Titanium (Tetrakis(dimethylamido)titanium(IV)), Niobium (Tris(diethylamido)(tert-butylimido)niobium(V)), Hafnium (Tetrakis(dimethylamido)hafnium(IV)), Silicon (Bis(diethylamido)silane)

Noncontact film thickness measurement for polymers, some dielectrics, and thin metals

Annealling in forming gas or nitrogen, 600 to 1050 C.)

Annealing at 380 to 500 C, in nitrogen or forming gas.

Wet or dry oxidation, 600 to 1050 C. Also annealing.

Nitrogen/vacuum polyimide film anneal. Temp to 300 C.

• Diode laser compatible with standard 365 nm UV photoresists
• Standard write mode can pattern features down to one micron
• High resolution write mode can pattern features down to 300 nm lines and spaces, in sufficiently thin resist
• Accepts substrates of any shape (round or square preferred)
• Accepts transparent or opaque substrates
• Accepts substrates as small as 5 mm x 5 mm (larger substrates preferred)
• Automatic focus via optical or pneumatic systems

Acid and base chemical processing, in beakers in hotplate wells. Two hotplates; two sinks; deionized water sprayer; solution aspirator; timers.

Ovens for baking many lithography wafers at once.

Selective removal of material by inductively-coupled plasma (ICP) RIE. Primarily intended for etching metals.

High-magnification imaging; digital image capture; advanced image manipulation tools.

Chemical bench with hotplate and manually-controlled wafer spinner.

Mask aligner & UV exposure tool. Automated handling of 3" wafers. Manual alignment. 4" masks. Used by UW microfabrication classes.

The ICP III-V Plasma Etcher system is equipped with a load-lock to transport wafers into the etch chamber while keeping the chamber under vacuum.  The system has a 2MHz, 1000W inductively coupled coil used to generate and control the plasma density.  The substrate is independently biased using a 13.56MHz, 600W power supply.  The system computer controls the transfer of wafers between the load lock and the process chamber, the vacuum pumping cycles, and the process parameters.  Th

Polysilicon LPCVD in SiH4; PH3 may be added as dopant.

Chemical bench with wafer spinner and vacuum hotplate, dedicated for coating and baking substrates epoxy photoresists such as SU8. Preprogrammed spin speed recipes.

Convection oven with nitrogen flow. Programmable temperature profiles. Temp to 425 C.

Non-contact Projection Lithogaphy. Configured for 150mm Wafers 5 inch reticle size. resolution 0.5 um NA: 0.5 illumination: i-line reduction ratio: 1 to 5 field size: 20 x 20 or 15.9 x 25.2 alignment accuracy 0.11 lxl plus 3 sigma

Selective removal of material by RF plasma.

Reactive ion etcher. Plasma is inductively coupled, low density, and low pressure. Ion energies are low. Tool can alternate cycles of etching and passivation. Result is good anisotropy in very deep (25o microns or greater) Si etch trenches.

General-use flow hood for solvents. Includes heated PR stripping tanks for cleaning wafers and masks. Do liftoff here.

Touchless drying of 4" wafers

Touchless drying of 3" or 4" wafers, after prefurnace clean

Flow hood for SU8 photoresist processing. Includes two programmable hotplates.

Furnace tube with microprocessor-controlled temperature profiles and gas flows. Recipes available for nitrogen or forming gass anneal. Wafer diameter to 4". Some metals are permitted in this furnace.

Cleans and strips organic material from wafers, and modifies surface energy, in preparation for later processing steps

Programmable diamond-tipped scriber; aids breaking samples up to 100 mm into smaller dies