Operation Modes: AC, Contact, LFM, Force, Nanolithography, EFM and Conductive AFM, and Low Force Indenter. Liquid AFM with closed fluid cell; Fluorescence filters.
Features: 90 μm travel in (x,y) & 15 μm in z; X-Y Closed loop (non-linearity
This Facility is managed by the UCSB Materials Department, which is separate from the MRL. External users wishing to access this facility should contact one of the Facility Managers below with inquiries.
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tmates [at] mrl [dot] ucsb [dot] edu (Dr. Tom Mates) |
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| cornish [at] engineering [dot] ucsb [dot] edu (Mr. Mark Cornish) |
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skraemer [at] engineering [dot] ucsb [dot] edu (Dr. Stephan Kraemer) |
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1st Floor of CNSI Building
Operation Modes: AC, Contact, LFM, Force, Nanolithography, EFM and Conductive AFM, and Low Force Indenter. Liquid AFM with closed fluid cell; Fluorescence filters.
Features: 90 μm travel in (x,y) & 15 μm in z; X-Y Closed loop (non-linearity
Operation Modes: AC, Contact, LFM, Force, Nanolithography, EFM and Conductive AFM, and Low Force Indenter.
Features: 90 micron travel in (x,y) and 15 micron in z; X-Y closed loop (non-linearity
DB235 is small stage system combining a Hexalens electron column and a Magnum ion column for failure analysis and high-end sample preparation. A Schottkey emitter is used for scanning electron microscopy (SEM) under 200 – 300 kV, while Gallium liquid metal is for focus ion beam (FIB) operated at 5 to 30 kV in a current range of 1pA to 20 nA. 3D imaging can be carried out by using these two beams arranged in 52°-tilt angle. The resolution is 3 nm for SEM and 7 nm for FIB.
High resolution scanning electron microscope completely controlled under WindowNT. Equipped with a high stability Schottky field emission gun and a large specimen chamber (379x280 mm door size). Oxford CL2 cathodoluminescence system will be attached. Back scattering detector for Z-imaging.
Voltage: 200 - 30 kV; Resolution: 3.0 nm @30kV; 10 nm @3kV.
This microscope is designed for 200kV and lower operation voltages, suitable for studies of biological, organic and other beam sensitive materials. For that purpose, this microscope is equipped with a CCD camera (Gatan Ultrascan 1000 2Kx2K) and a cryo-station for specimen preparation and transfer within liquid nitrogen. With a LaB6 emitter, the resolution is 0.27 nm at 200kV. Features: (1) Tomography with high tilt and large field of view; (2) CompuStage with Smart-Tilt software; (3) Low-dose exposure.
This microscope is equipped with a LaB6 emitter and S-twin lens for higher resolution at 200kV. Also an Oxford electron dispersive X-ray spectroscopy (EDS) system is attached for chemical analysis, and a Gatan UltraScan 1000P CCD camera for image recording (2kx2k).
Point resolution 0.24 nm; Line res. 0.14 nm; Cs = 1.2 mm; Cc = 1.2 mm.
Specimen holders: (1) Single tilt holder ±40°; (2) Double tilt holder (x ±40°, y ±40°).
With a field emission gun (FEG), this microscope is designed for both high resolution TEM/STEM and analytical microscopy. The attachments of this microscope are: (1) A scanning unit with a high-angle annular dark-field (HAADF) detector for scanning TEM (Z-contrast imaging); (2) Gatan Enfina 1000 system for electron energy-loss spectroscopy (EELS); (3) Electron dispersive X-ray analysis system (EDXA) for chemical information; (4) Gatan wide-angle CCD (2kx2k) for image recording.
The energy spread is 0.7 eV; Point resolution 0.2nm; information limit
High resolution scanning electron microscope completely controlled under WindowNT. Equipped with a high stability Schottky field emission gun and a large specimen chamber (379x280 mm door size). Back scattering detector for Z-imaging.
Voltage: 500-30keV; Resolution: 1.2 nm @30keV.
High resolution scanning electron microscope completely controlled under WindowNT. Equipped with a high stability Schottky field emission gun and a large specimen chamber (379x280 mm door size). Oxford Inca x-ray system is attached. Back scattering detector for Z-imaging.
Voltage: 500-30keV; Resolution: 1.2 nm @30keV.
Atom probe provides atomic -resolution, three-dimensional imaging, compositional imaging, and analyses. The Imago atom probe is used to analyze the structure and composition of materials for light emission and electronic devices, materials systems for advanced propulsion, energy generation, including gas turbines and nuclear reactors, and hypersonic flight.
The atom probe instrument can be used to solve key problems in interfacial chemistry and abruptness, alloy composition and homogeneity, and dopant and impurity concentrations in a wide range of materials.
Purchased in 2001, the Kratos Ultra combines fast, high-sensitivity XPS (X-Ray Photoelectron Spectrometry) with a unique "real-time" imaging capability that allows us to quickly produce 2-dimensional chemical-state maps with spatial resolution as fine as 5 microns. The system also provides state-of-the-art charge compensation for non-conductive specimens. Spectra can be taken from areas as small as 15 microns in diameter. And most elements other than hydrogen and helium can be detected down to approximately 0.1%.
Dynamic SIMS is used for depth profiling solid materials, allowing a determination of elemental composition as a function of depth. The key attributes of SIMS are its unparalleled sensitivity (detection down to ppb levels in some cases) and its high depth resolution (as low as 30 Angstroms). SIMS is not inherently quantitative but can give quantitative results on unknowns if appropriate standards are supplied. In depth profiling mode, up to 12 elements can be monitored as a function of depth in a single scan.
These SPMs have the similar functions in surface measurements with the Milti-Mode microscope as stated above. The major difference is that this microscope is designed for imaging a 6" wafer. A large specimen stage is provided and the microscope is located in an anti-vibration hood. Inside the microscope, there is an optical system by the scanner to guide the scan with an image of the sample surface shown on the screen. With this optical image, users can search a specific feature as small as 0.1µm to scan.
This microscope can be performed at both tapping and contact mode with highest resolution manufactured. With either the D-type (10x10x25µm) or the J-type scanner (125x125x5µm), images on both atomic and macroscopic scales can easily be obtained. The microscope performs the full range of SPM techniques to measure surface characteristics such as surface topography, elasticity, friction, adhesion, magnetic fields, and electrical fields. Surfaces of a wide range of materials, including conducting and non-conducting samples, can be examined with this microscope.
MRFN.org is supported by the MRSEC Program of the National Science Foundation. Image in the header is courtesy of CRISP MRSEC.